BC857BV
DUAL
TRANSISTOR (PNP)
FEATURES
Epitaxial Die Construction
Complementary NPN Types Available
(BC847BV)
Ultra-Small Surface Mount Package
Marking: K5V
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted
)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θ
JA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.1
0.15
833
150
-55 to +150
Units
V
V
V
A
W
℃/W
℃
℃
SOT-563
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(sat)(1)
V
BE(sat)(2)
V
BE(1)
V
BE(2)
f
T
C
ob
NF
Test
conditions
MIN
-50
-45
-5
-15
220
475
-0.1
-0.4
-0.7
-0.9
-0.6
-0.75
-0.82
100
4.5
10
V
V
V
V
V
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
nA
I
C
=-10μA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-1μA,I
C
=0
V
CB
=-30V,I
E
=0
V
CE
=-5V,I
C
=-2mA
I
C
=-10mA,I
B
=-0.5mA
I
C
=-100mA,I
B
=-5mA
I
C
=-10mA,I
B
=-0.5mA
I
C
=-100mA,I
B
=-5mA
V
CE
=-5V,I
C
=-2mA
V
CE
=-5V,I
C
=-10mA
V
CE
=-5V,I
C
=-10mA,f=100MHz
V
CB
=-10V,I
E
=0,f=1MHz
V
CE
=-5V,I
c
=-0.2mA,
f=1kHZ,Rs=2KΩ,BW=200Hz
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
