BC857S
Multi-Chip TRANSISTOR (PNP)
SOT-363
FEATURES
Power dissipation
P
CM
: 300
mW(Tamb=25℃)
E1
B1
C2
C1
B2
E2
Collector current
I
CM
: -200
mA
Collector-base voltage
V
V
(BR)CBO
: -50
Operating and storage junction temperature range
T
J,
T
stg
: -55℃to +150℃
MARKING: 3C
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)(1)
Collector-emitter saturation voltage
V
CE(sat)(2)
V
BE(1)
Base-emitter voltage
V
BE(2)
Transition frequency
Collector output capacitance
Noise figure
f
T
C
ob
NF
V
CE
=-5V,I
C
=-10mA
V
CE
=-5V,I
C
=-10mA,f=100MHz
V
CB
=-10V,I
E
=0,f=1MHz
V
CE
=-5V,I
c
=-0.2mA,
f=1kHZ,Rs=2KΩ,BW=200Hz
I
C
=-100mA,I
B
=-5mA
V
CE
=-5V,I
C
=-2mA
-0.6
Test
conditions
MIN
-50
-45
-5
TYP
MAX
UNIT
V
V
V
Ic=-10µA,I
E
=0
Ic=-10mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
=-30V,I
E
=0
V
CE
=-5V,I
C
=-2mA
I
C
=-10mA,I
B
=-0.5mA
-15
125
630
-0.3
-0.65
-0.75
-0.82
200
3.5
2.5
nA
V
V
V
V
MHz
pF
dB
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
