BC856A,B
BC857A, B,C
BC858A, B,C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC856
BC857
BC858
Collector-emitter breakdown voltage
BC856
BC857
BC858
Emitter-base breakdown voltage
Collector cut-off current
BC856
BC857
BC858
Collector cut-off current
BC856
BC857
BC858
Emitter cut-off current
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
V
CE
(sat)
V
BE
(sat)
I
C
=-100mA, I
B
= -5 mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5 V, I
C
= -10mA
h
FE
V
CE
= -5V,
I
C
= -2mA
I
EBO
I
CEO
I
CBO
V
EBO
I
E
= -1
μ
A, I
C
=0
V
CB
= -70 V , I
E
=0
V
CB
= -45 V , I
E
=0
V
CB
= -25 V , I
E
=0
V
CE
= -60 V , I
B
=0
V
CE
= -40 V , I
B
=0
V
CE
= -25 V , I
B
=0
V
EB
= -5 V ,
I
C
=0
125
220
420
-0.1
250
475
800
-0.5
-1.1
100
4.5
V
V
MHz
pF
-0.1
-0.1
V
CEO
I
C
= -10mA, I
B
=0
V
CBO
I
C
= -10
μ
A, I
E
=0
Symbol
Test
conditions
MIN
-80
-50
-30
-65
-45
-30
-5
V
V
V
MAX
UNIT
μ
A
μ
A
μ
A
f
T
C
ob
f=
100MHz
V
CB
=-10V, f=1MHz
２
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semiconductor
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