BCX69
TRANSISTOR (PNP)
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCX68 (NPN)
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-25
-20
-5
-1
0.8
150
-65-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
BCX69
BCX69-10
BCX69-16
BCX69-25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
1)
Test
conditions
MIN
-25
-20
-5
TYP
MAX
UNIT
V
V
V
I
C
=-10μA , I
E
=0
I
C
=-30mA , I
B
=0
I
E
=-1μA, I
C
=0
V
CB
=-25V, I
E
=0
V
EB
=-5V, I
C
=0
-0.1
-0.1
85
85
100
160
50
60
-0.5
-0.6
-1
100
375
160
250
375
μA
μA
h
FE (1)
V
CE
=-1V, I
C
=-500mA
h
FE(2)
1)
V
CE
=-10V, I
C
=-5mA
V
CE
=-1V, I
C
=-1A
I
C
=-1A, I
B
=-100mA
I
C
=-5mA, V
CE
=-10V
I
C
=-1A, V
CE
=-1V
V
CE
=-5V, I
C
=-100mA
f=20MHz
h
FE(3) 1)
Collector-emitter saturation voltage
Base-emitter
voltage
V
CE(sat)
V
BE(ON)
f
T
1)
V
V
MHz
Transition frequency
1)
Pulse test: t
≤=300µs,
D = 2%
BCX69-10=CF1
BCX69-16=CG1
BCX69-25=CH1
MARKING:
BCX69=CE1
１
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semiconductor
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