BF8 20/ BF8 22
TRANSISTOR (NPN)
SOT-23
FEATURES
Low current (max.50 mA)
High voltage (max.300V)
Telephony and professional communication equipment.
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BF820:1V, BF822: 1X
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
BF820
BF822
BF820
BF822
Value
300
250
300
250
5
50
0.25
150
-55-150
Units
V
V
V
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test
conditions
BF820
BF822
BF820
BF822
MIN
300
250
300
250
5
0.01
0.05
50
0.6
60
1.6
V
MHz
pF
MAX
UNIT
V
V
V
I
C
=100
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
= 100
μ
A, I
C
=0
V
CB
=200V,I
E
=0
V
EB
= 5V,I
C
=0
V
CE
= 20V,I
C
=25mA
I
C
=30mA,I
B
= 5mA
μ
A
μ
A
f
T
C
ob
V
CE
=10V, I
C
= 10mA,
f=
100MHz
V
CB
=30V,I
E
=0,f=1MHz
１
JinYu
semiconductor
www.htsemi.com
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HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
