BST39,BST40
TRANSISTOR (NPN)
FEATURES
Low Current
High Voltage
APPLICATIONS
General Purpose Switching and Amplification
MARKING:BCT39:AT1
BCT40:AT2
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
BST39
BST40
BST39
BST40
Value
400
300
350
250
5
100
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
BST39
BST40
BST39
BST40
Min
400
300
350
250
5
20
100
40
0.5
70
2
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=300V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=10V, I
C
=20mA
I
C
=50mA,I
B
=4mA
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE
=10V,I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
１
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semiconductor
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