EMB4
General purpose transistors (dual digital transistors)
FEATURES
Two DTA114T chips in a package
Marking: B4
(3)
(2)
(1)
SOT-563
Equivalent circuit
R
1
1
R
1
(4)
(5)
(6)
Absolute maximum ratings (T
a
=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-50
-50
-5
-100
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Intput resistance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R
1
Test
I
C
=-50μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-5V, I
C
=-1mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-10V, I
C
=-5mA, f=100MHz
-
7
250
13
100
conditions
Min
-50
-50
-5
-0.5
-0.5
600
-0.3
V
MHz
Ω
Typ
Max
Unit
V
V
V
μA
μA
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
