EMB9
dual digital transistors (PNP+ PNP)
FEATURES
Two DTA114Y chips in a package
Mounting possible with SOT-563 automatic mounting machines
Transistor elements are independent,eliminating interference
Mouting cost and area be cut in half
Marking: B9
Equivalent circuit
SOT-563
1
Absolute maximum ratings (T
a
=25℃)
Symbol
V
CC
I
C(MAX)
V
i
P
D
T
J
T
stg
Parameter
Supply Voltage
Output Current
Input Voltage
Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-100
-40 to +6
150
150
-55~+150
Units
V
mA
V
mW
℃
℃
Electrical Characteristics (T
a
=25℃)
Parameter
Input turn-on voltage
Input cut-off voltage
Output voltage
Input cut-off current
Output cut-off current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Symbol
V
i(on)
V
i(off)
V
O(on)
I
i
I
O(off)
G
i
f
T
R
1
R
2/
R
1
Test
conditions
Min
-1.4
-0.3
-0.3
-0.88
-0.5
68
250
7
3.7
13
5.7
MHz
KΩ
Typ
Max
Unit
V
V
V
mA
µA
V
O
=-0.3V, I
O
=-1mA
V
CC
=-5V, I
O
=-100µA
I
O
=-5mA, I
i
=-0.25 mA
V
i
=-5V
V
CC
=-50V, V
i
=0
V
O
=-5V, I
O
=-5mA
V
O
=-10V, I
O
=5mA, f =100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05