EMH3
DIGITAL TRANSISTOR (NPN+ NPN)
SOT-563
FEATURES
Two DTC143T chips in a UMT package
Transistor elements are independent, eliminating interference
Mounting cost and area can be cut in half.
External circuit
1
MARKING:H3
Absolute maximum ratings(Ta=25℃)
Parameter
Collector-base
voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
Tj
Tstg
Limits
50
50
5
100
150
150
-55~150
Unit
V
V
V
mA
mW
℃
℃
Collector-emitter voltage
Emitter-base
voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
100
3.29
4.7
250
Min.
50
50
5
0.5
0.5
0.3
600
6.11
KΩ
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
Typ
Max.
Unit
V
V
V
μA
μA
V
Conditions
Ic=50μA
Ic=1mA
I
E
=50μA
V
CB
=50V
V
EB
=4V
I
C
=5mA,I
B
=0.25mA
V
CE
=5V,I
C
=1mA
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
