ES1A THRU ES1M
•
•
•
•
•
Features
For
Surface
Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
Maximum Ratings
•
•
•
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 15
°C/W
Junction To Lead
Device
Maximum
Maximum Maximum
Catalog
Marking
Recurrent
RMS
DC
Number
Peak Reverse
Voltage
Blocking
Voltage
Voltage
ES1A
ES1A
50V
35V
50V
ES1B
ES1B
100V
70V
100V
ES1C
ES1C
150V
105V
150V
200V
140V
200V
ES1D
ES1D
ES1G
ES1G
400V
280V
400V
ES1J
ES1J
600V
420V
600V
ES1K
ES1K
800V
560V
800V
ES1M
1000V
700V
1000V
ES1M
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ES1A-D
ES1G-K
ES1M
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band
J
A
C
E
F
G
D
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
I
F(AV)
I
FSM
1.0A
30A
T
J
= 75°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
J
DIMENSIONS
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
V
F
.975V
1.35V
1.60V
I
FM
= 1.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 100°C
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
ES1A-D
ES1G-K
ES1M
I
R
5µA
100µA
SUGGESTED SOLDER
PAD LAYOUT
0.090”
T
rr
C
J
50ns
60ns
100ns
Typical Junction
Capacitance
45pF
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
0.085”
0.070”
*Pulse test: Pulse width 200
µsec,
Duty cycle 2%
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
