M1
•
•
•
•
THRU
M7
Features
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
1 Amp
Silicon Rectifier
50 to 1000 Volts
SMAE
A
Cathode Band
•
Operating Temperature: -65°C to +175°C
•
Storage Temperature: -65°C to +175°C
•
Maximum Thermal Resistance; 15
°C/W
Junction To Lead
Maximum
Reccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum Ratings
Device
Marking
M1
M2
M3
M4
M5
M6
M7
B
G
C
F
H
E
D
DIMENSIONS
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1.0A
T
J
= 75°C
current
Peak Forward Surge
I
FSM
50A
8.3ms, half sine,
Current
T
J
= 150°C
Maximum
I
FM
= 1.0A;
Instantaneous
V
F
1.1V
T
J
= 25°C*
Forward Voltage
Maximum DC
Reverse Current At
I
R
10µA
T
J
= 25°C
Rated DC Blocking
50µA
T
J
= 125°C
Voltage
I
F
=0.5A, I
R
=1.0A,
Maximum Reverse
T
rr
1.8µs
Recovery Time
I
rr
=0.25A
Typical Junction
C
J
15pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
DIM
A
B
C
D
E
F
G
H
INCHES
MIN
0.157
0.100
0.078
0.194
0.055
0.006
0.030
MAX
0.177
0.110
0.096
0.222
0.071
0.008
0.012
0.060
MM
MIN
3.99
2.54
1.98
4.93
1.40
0.152
0.76
MAX
4.50
2.80
2.42
5.56
1.80
0.203
0.305
1.52
NOTE
１
JinYu
semiconductor
www.htsemi.com
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