KSA1182
TRANSISTOR (PNP)
FEATURES
Complement to KSC2859
1. BASE
SOT-23
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-0.5
150
150
-55-150
Units
V
V
V
A
mW
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
f
T
C
ob
unless
Test
otherwise
specified)
MIN
-35
-30
-5
-0.1
-0.1
70
25
-0.25
-1.0
200
13
V
V
MHz
pF
240
TYP
MAX
UNIT
V
V
V
μA
μA
conditions
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-35V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-400mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-20mA
V
CB
=-6V, I
E
=0, f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
h
FE(1)
O
70-140
F1O
Y
120-240
F1Y
１
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semiconductor
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