KTA1504
TRANSISTOR (PNP)
SOT–23
FEATURES
Complementary to KTC3875
Low Noise
Excellent h
FE
Linearity
1. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-150
150
833
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V,I
C
=-1mA,
V
CB
=-10V, I
E
=0, f=1MHz
80
7
70
conditions
Min
-50
-50
-5
-0.1
-0.1
400
-0.3
V
MHz
pF
Typ
Max
Unit
V
V
V
µA
µA
I
C
=-100µA, I
E
=0
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
O
70–140
ASO
Y
120–240
ASY
GR
200–400
ASG
1
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05