KTA2014
TRANSISTOR (PNP)
SOT-323
FEATURES
Low frequency power amplifier application
Power switching application
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
150
100
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
Emitter
cut-off
current
current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C
ob
NF
Test
conditions
I
E
=0
MIN
-50
-50
-5
-0.1
-0.1
70
400
-0.3
80
7
10
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=- 0.1mA,
I
C
= -1mA, I
B
=0
I
E
=-0.1mA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-6V,I
C
=-2mA
I
C
=-100mA, I
B
= -10mA
V
CE
=-10V, I
C
=-1mA,
V
CB
=-10V, I
E
=0
f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1KHz,Rg=10KΩ
DC current
gain
Collector-emitter saturation voltage
Transition
frequency
Collector output capacitance
Noise Figure
CLASSIFICATION OF h
FE
Rank
Range
MARKING
O(2)
70-140
SO
Y(4)
120-240
SY
GR(6)
200-400
SG
１
JinYu
semiconductor
www.htsemi.com
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