KTC3876
TRANSISTOR (NPN)
FEATURES
·
High hFE
·
Complementary to KTA1505
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
500
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
DC current gain
h
FE2
Collector-emitter saturation voltage
base-emitter voltage
Transition frequency
Collector output capacitance
V
CE
(sat)
V
BE
f
T
C
ob
Test
I
C
=100
μ
A, I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 100
μ
A, I
C
=0
V
CB
= 35V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=1V, I
C
= 100mA
V
CE
=6V, I
C
= 400mA
O
Y
I
C
=100mA, I
B
= 10mA
V
CE
=1V, I
B
= 100mA
V
CE
=6V,
I
C
=20mA
300
7
70
25
40
0.25
1
V
V
MHz
pF
conditions
MIN
35
30
5
0.1
0.1
400
TYP
MAX
UNIT
V
V
V
μ
A
μ
A
V
CB
=6V,I
E
=0,f=1MH
Z
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70-140
WO
Y
120-240
WY
GR(G)
200-400
WG
1
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05