KTC4075
TRANSISTOR (NPN)
FEATURES
Excellent h
FE
linearity
High h
FE
Low Noise
Complementary to KTA2014
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
60
50
5
150
100
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
f
T
C
ob
NF
Test
I
C
= 100μA, I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
= 6V, I
C
=2mA
I
C
=100mA, I
B
= 10mA
V
CE
=10V, I
C
= 1mA
V
CE
=10V, I
E
=0, f=1MHz
V
CE
=6V,I
E
=0.1mA, f=1KHz,R
G
=10KΩ
80
3.5
10
70
conditions
MIN
60
50
5
0.1
0.1
700
0.25
V
MHz
pF
dB
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70~140
LO
Y
120~240
LY
GR
200~400
LGR
BL
350~700
LBL
１
JinYu
semiconductor
www.htsemi.com
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