KTC4076
TRANSISTOR (NPN)
FEATURES
Excellent h
FE
Linearity
Complementary to KTA2015
APPLICATIONS
General Purpose Switching
1. BASE
SOT–323
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
35
30
5
500
100
1250
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
C
ob
Test
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=400mA
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
=100mA
V
CB
=6V,I
C
=20mA ,
V
CB
=6V, I
E
=0, f=1MHz
300
7
70
25
0.25
1
V
V
MHz
pF
conditions
Min
35
30
5
0.1
0.1
240
Typ
Max
Unit
V
V
V
µA
µA
CLASSIFICATION OF
h
FE(1)
, h
FE(2)
RANK
RANG
h
FE(1)
h
FE(2)
MARKING
O
70–140
25Min
WO
Y
120–240
40Min
WY
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
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