KTD1302
TRANSISTOR (NPN)
FEATURES
Small Flat Package
Audio Muting Application
High Emitter-Base Voltage
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
25
20
12
300
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1) (FOR)
h
FE(2)(REV)
V
CE(sat)
V
BE(sat)
C
ob
f
T
Test
conditions
Min
25
20
12
100
100
200
20
0.25
1
10
60
V
V
pF
MHz
800
Typ
Max
Unit
V
V
V
nA
nA
I
C
=0.1mA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.1mA,I
C
=0
V
CB
=25V,I
E
=0
V
EB
=12V,I
C
=0
V
CE
=2V, I
C
=4mA
V
CE
=2V, I
C
=4mA
I
C
=100mA,I
B
=10mA
I
C
=100mA,I
B
=10mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=10V,I
C
=1mA,
f=100MHz
１
JinYu
semiconductor
www.htsemi.com
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