M28 S
TRANSISTOR(NPN)
SOT–23
FEATURES
Excellent h
FE
Linearity
High DC Current Gain
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
20
6
1
200
625
150
-55�½�+150
Unit
V
V
V
A
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
f
T
C
ob
Test
I
C
=1mA, I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=35V, I
E
=0
V
CE
=20V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
V
CE
=1V, I
C
=500mA
I
C
=600mA, I
B
=20mA
V
CE
=10V,I
E
=50mA, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
100
9
290
300
300
300
0.55
V
MHz
pF
1000
conditions
Min
40
20
6
0.1
5
0.1
Typ
Max
Unit
V
V
V
µA
µA
µA
I
C
=0.1mA, I
E
=0
CLASSIFICATION OF
h
FE(2)
RANK
RANGE
MARKING
B
300–550
C
500–700
28S
D
650–1000
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
