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MM1Z5252C 参数 Datasheet PDF下载

MM1Z5252C图片预览
型号: MM1Z5252C
PDF下载: 下载PDF文件 查看货源
内容描述: 硅平面齐纳二极管 [SILICON PLANAR ZENER DIODES]
分类和应用: 二极管齐纳二极管局域网
文件页数/大小: 3 页 / 592 K
品牌: HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
 浏览型号MM1Z5252C的Datasheet PDF文件第2页浏览型号MM1Z5252C的Datasheet PDF文件第3页  
MM1Z5231C~MM1Z5261C
SILICON PLANAR ZENER DIODES
PINNING
Features
• Total power dissipation: Max. 500 mW
• Small plastic package suitable for
surface mounted design
• Zener Voltage Tolerance: ± 2%
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P
tot
T
j
T
stg
Value
500
150
- 55 to + 150
Unit
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 10 mA
Marking
Code
YN
YO
YP
YQ
YR
YS
YT
YU
YV
YW
YX
YY
YZ
ZA
ZB
ZC
ZD
ZE
ZF
ZG
ZH
ZI
ZJ
ZK
Zener Voltage Range
V
ZT
Min. (V)
Max. (V)
4.998
5.202
5.488
5.712
6.076
6.324
6.664
6.936
7.35
7.65
8.036
8.364
8.918
9.282
9.8
10.2
10.78
11.22
11.76
12.24
12.74
13.26
14.7
15.3
15.68
16.32
17.64
18.36
19.6
20.4
21.56
22.44
23.52
24.48
26.46
27.54
29.4
30.6
32.34
33.66
35.28
36.72
38.22
39.78
42.14
43.86
46.06
47.94
1)
Symbol
R
θJA
V
F
Max.
350
0.9
Unit
O
C/W
V
Type
MM1Z5231C
MM1Z5232C
MM1Z5234C
MM1Z5235C
MM1Z5236C
MM1Z5237C
MM1Z5239C
MM1Z5240C
MM1Z5241C
MM1Z5242C
MM1Z5243C
MM1Z5245C
MM1Z5246C
MM1Z5248C
MM1Z5250C
MM1Z5251C
MM1Z5252C
MM1Z5254C
MM1Z5256C
MM1Z5257C
MM1Z5258C
MM1Z5259C
MM1Z5260C
MM1Z5261C
1)
V
znom
V
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
at I
ZT
mA
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7
6.2
5.6
5.2
4.6
4.2
3.8
3.4
3.2
3
2.7
Dynamic Impedance
Z
ZT
at I
ZT
Z
ZK
Max. (Ω)
mA
Max. (Ω)
17
20
1600
11
20
1600
7
20
1000
5
20
750
6
20
500
8
20
500
10
20
600
17
20
600
22
20
600
30
20
600
13
9.5
600
16
8.5
600
17
7.8
600
21
7
600
25
6.2
600
29
5.6
600
33
5.2
600
41
4.6
600
49
4.2
600
58
3.8
700
70
3.4
700
80
3.2
800
93
3
900
105
2.7
1000
at I
ZK
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Reverse Current
I
R
at V
R
Max. (µA)
V
5
2
5
3
5
4
3
5
3
6
3
6.5
3
7
3
8
2
8.4
1
9.1
0.5
9.9
0.1
11
0.1
12
0.1
14
0.1
15
0.1
17
0.1
18
0.1
21
0.1
23
0.1
25
0.1
27
0.1
30
0.1
33
0.1
36
V
Z
is tested with pulses (20 ms)
1 
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05