MMBD4448V
SWITCHING DIODE
SOT-563
FEATURES
Fast switching speed
High conductance
MARKING: KAL
1
Maximum Ratings @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
RMS Reverse Voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
@=1.0s
Power Dissipation
Thermal
Ambient
Storage temperature
Resistance
Junction
to
Symbol
V
RM
V
R(RMS)
V
RRM
V
RWM
V
R
I
FM
I
O
I
FSM
Pd
R
θJA
T
STG
500
250
4.0
1.5
150
833
-65 to +150
mA
mA
A
mW
K/W
℃
80
V
Limits
100
57
Unit
V
V
Electrical Ratings @T
A
=25℃
Parameter
Reverse Breakdown Voltage
Symbol
V
(BR)R
V
F1
Forward voltage
V
F2
V
F3
V
F4
Reverse current
Capacitance between terminals
Reverse Recovery Time
I
R1
I
R2
C
T
t
rr
Min.
80
0.62
0.72
0.855
1.0
1.25
Typ.
Max.
Unit
V
V
V
V
V
μA
nA
pF
ns
Conditions
I
R
=2.5μA
I
F
=5mA
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=70V
V
R
=20V
V
R
=6V,f=1MHz
V
R
=6V, I
F
=5mA
0.1
25
3.5
4
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
