MMBT2907A
TRANSISTPR(PNP)
SOT-23
FEATURES
Epitaxial planar die construction
Complementary NPN Type available(MMBT2222A)
1. BASE
2. EMITTER
Marking: 2F
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
T
J
T
stg
Parameter
Value
-60
-60
-5
-600
250
500
150
-55 to +150
Units
V
V
V
mA
mW
℃/W
℃
℃
3. COLLECTOR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
I
CBO
I
EBO
I
CEX
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
*Pulse test: t
p
≤300μS, δ≤0.02.
V
CE(sat)*
V
CE(sat)*
V
BE(sat)*
V
BE(sat)*
f
T
t
d
t
r
t
S
t
f
V
CE
=-30V,I
C
=-150mA,
B1
=-15mA
V
CE
=-6V,I
C
=-150mA,
I
B1
=- I
B2
=- 15mA
Test
conditions
MIN
-60
-60
-5
-20
-10
-50
100
75
100
100
50
-0.4
-1.6
-1.3
-2.6
200
10
25
225
60
V
V
V
V
MHz
nS
nS
nS
nS
300
TYP
MAX
UNIT
V
V
V
nA
nA
nA
I
C
=-10μA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-50V,I
E
=0
V
CE
=-3V, I
C
=0
V
CE
=-30 V, V
BE(off)
=-0.5V
V
CE
=-10V,I
C
=-150mA
V
CE
=-10V,I
C
=-0.1mA
V
CE
=-10V,I
C
=-1mA
V
CE
=-10V,I
C
=-10mA
V
CE
=-10V,I
C
=-500mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-20V,I
C
=-50mA,f=100MHz
１
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semiconductor
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