MMBT5550
TRANSISTOR(NPN)
FEATURES
High Voltage Transistor
MARKING:M1F
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
160
140
6
600
225
556
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
SOT–23
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
Test
conditions
Min
160
140
6
0.1
50
60
60
20
0.15
0.25
1
1.2
V
V
V
V
250
Typ
Max
Unit
V
V
V
µA
nA
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.01mA, I
C
=0
V
CB
=100V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
Base-emitter saturation voltage
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
１
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semiconductor
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