MMBTA92
TRANSISTOR(PNP)
SOT-23
FEATURES
High voltage transistor
MARKING:2D
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
R
ӨJA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
Parameter
Value
-300
-300
-5
-300
300
150
-55-150
410
Units
V
V
V
mA
mW
℃
℃
℃/mW
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
Test
conditions
MIN
-300
-300
-5
-0.25
-0.1
60
100
60
-0.2
-0.9
50
V
V
MHz
200
MAX
UNIT
V
V
V
I
C
= -100
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
V
CB
=-200V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
=-10mA
V
CE
= -10V, I
C
=-30mA
I
C
=-20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
V
CE
=-20V, I
C
= -10mA
μ
A
μ
A
f
T
f=
30MHz
１
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semiconductor
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