MMBTA43
TRANSISTOR(NPN)
SOT–23
FEATURES
High Voltage Application
Telephone Application
Complementary to MMBTA93
MARKING:ABX
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
200
200
5
500
350
357
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
h
FE(3)
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
*
V
BE(sat)
*
f
T
C
ob
Test
conditions
Min
200
200
5
40
40
40
0.5
0.9
50
4
V
V
MHz
pF
Typ
Max
Unit
V
V
V
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.1mA, I
C
=0
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CE
=20V,I
E
=10mA, f=100MHz
V
CB
=20V, I
E
=0, f=1MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
1
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05