MMST5551
TRANSISTOR(NPN)
FEATURES
Complementary to MMST5401
Small Surface Mount Package
Ideal for Medium Power Amplification and Switching
MARKING:K4N
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
600
200
625
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
Test
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
DC current gain
h
FE
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V,I
C
=10mA , f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
100
80
80
30
0.2
0.15
1
1
300
6
V
V
V
V
MHz
pF
300
conditions
Min
180
160
6
50
50
Typ
Max
Unit
V
V
V
nA
nA
I
C
=100µA, I
E
=0
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
BE(sat)
f
T
C
ob
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
１
JinYu
semiconductor
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