PT4410
30V N-Channel Enhancement Mode MOSFET
V
DS
= 30V
R
DS(ON)
, V
gs
@10V, I
ds
@12A = 10.5mΩ
R
DS(ON)
, V
gs
@4.5V, I
ds
@12A = 15mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
Package Dimensions
D D D D
8 7 6 5
1 2
S S
3 4
S G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0°
0.40
0.19
6.20
5.00
4.00
8°
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Symbol
Limit
Unit
V
DS
V
GS
I
D
I
DM
TA = 25
o
C
TA = 75
o
C
P
D
T
J
, T
stg
EAS
R
θ
JC
R
θ
JA
30
±
20
12
48
2.5
1.2
-55 to 150
150
25
50
o
V
A
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
W
o
C
mJ
C/W
１
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