PT8822
20V Dual N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ
RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ
RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Ideal for Li ion battery pack applications
Package Dimensions
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 MAX.
0
0.70
0.10
1.00
REF.
L
L1
θ
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
0.30
0.50
10°
0.95 REF.
1.90 REF.
0.12 REF.
2.70
3.10
2.60
1.40
3.00
1.80
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
25
o
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Symbol
Limit
Unit
V
DS
V
GS
I
D
I
DM
TA = 25
o
C
TA = 75
o
C
P
D
T
J
, T
stg
R
θ
JA
20
±
12
7
25
2
1.2
-55 to 150
62.5
o
V
A
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
W
o
C
C/W
１
JinYu
semiconductor
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