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PXT2222A 参数 Datasheet PDF下载

PXT2222A图片预览
型号: PXT2222A
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管( NPN ) [TRANSISTOR (NPN)]
分类和应用: 晶体晶体管开关
文件页数/大小: 2 页 / 782 K
品牌: HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
 浏览型号PXT2222A的Datasheet PDF文件第2页  
PXT2222A
TRANSISTOR (NPN)
SOT-89
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(PXT2907A)
1.
BASE
2.
COLLECTOR
3.
EMITTER
Units
V
V
V
mA
W
conditions
MIN
75
40
6
0. 01
0. 01
35
50
75
100
50
40
1
0.3
2.0
0.6
300
8
10
25
225
60
1.2
V
V
V
V
MHz
pF
nS
nS
nS
nS
300
MAX
UNIT
V
V
V
μA
μA
1
2
3
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Value
75
40
6
600
0.5
150
-55 +150
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
h
FE(6)
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
t
d
t
r
t
S
t
f
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Test
I
C
= 10μ A,I
E
=0
I
C
= 10mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
= 5V , I
C
=0
V
CE
=10V, I
C
= 0.1mA
V
CE
=10V, I
C
= 1mA
V
CE
=10V, I
C
= 10mA
V
CE
=10V, I
C
= 150mA
V
CE
=1V,
I
C
= 150mA
V
CE
=10V, I
C
= 500mA
I
C
=500mA, I
B
= 50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
V
CE
=10V, I
C
=20mA
f=100MHz
V
CB
=10V, I
E
= 0,f=1MHz
V
CC
=30V, I
C
=150mA
V
BE(off)
=0.5V,I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=- I
B2
= 15mA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
1 
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05