PXT8 550
TRANSISTOR(PNP)
SOT-89
FEATURES
Compliment to PXT8050
MARKING: Y2
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-1.5
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
1. BASE
2. COLLECTOR
1
2
3. EMITTER
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
CLASSIFICATION OF h
FE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
D3
300-400
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE(on)
V
BEF
f
T
C
ob
Test
conditions
I
E
=0
MIN
-40
-25
-5
-0.1
-0.1
-0.1
85
40
-0.5
-1.2
-1
-1.55
100
20
V
V
V
V
MHz
pF
400
MAX
UNIT
V
V
V
μA
μA
μA
I
C
= -100μA,
I
C
= -0.1mA, I
B
=0
I
E
= -100μA, I
C
=0
V
CB
= -40 V,I
E
=0
V
CE
= -20V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
=-800mA, I
B
= -80mA
I
C
=-800mA, I
B
= -80mA
Ic=-1V,V
CE
=-10mA
I
B
=-1A
V
CE
= -10V, I
C
= -50mA
V
CB
=-10V,I
E
=0,f=1MHz
１
JinYu
semiconductor
www.htsemi.com
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