RB717F
SCHOTTKY BARRIER DIODE
FEATURES:
Low V
F
, Low V
R
High reliability
MARKING:
3E·
SOT-323
Maximum Ratings @T
A
=25
℃
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FSM
I
O
P
D
T
j
T
stg
Limits
40
40
200
30
200
125
-40-125
Unit
V
V
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse voltage leakage current
Forward voltage
Capacitance between terminals
Symbol
I
R
V
F
C
T
Test
unless
conditions
V
R
=10V
I
F
=1mA
otherwise
MIN
specified)
TYP
MAX
1
0.37
2.0
UNIT
μA
V
pF
V
R
=1V, f=1MHz
１
JinYu
semiconductor
www.htsemi.com
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