SS12 THRU SS110
Features
•
•
•
•
•
•
•
•
•
Schottky Barrier Rectifier
Guard Ring Protection
Low Forward Voltage
Reverse Energy Tested
High Current Capability
Extremely Low Thermal Resistance
1 Amp Schottky
Rectifier
20 to 100 Volts
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 35
°C/W
Junction To Lead
Catalog
Number
SS12
SS13
SS14
SS15
SS16
SS18
SS110
Device
Marking
SS12
SS13
SS14
SS15
SS16
SS18
SS110
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
50V
60V
80V
100V
Maximum
RMS
Voltage
14V
21V
28V
35V
42V
56V
70V
Maximum
DC
Blocking
Voltage
20V
30V
40V
50V
60V
80V
100V
A
DO-214AC
Cathode Band
B
G
C
F
H
E
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
SS12
SS13
SS14
SS15-16
SS18-110
I
F(AV)
I
FSM
1.0A
30A
T
J
= 100°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
D
DIMENSIONS
INCHES
MIN
0.157
0.100
0.078
0.194
0.055
0.006
0.030
MM
MIN
3.99
2.54
1.98
4.93
1.40
0.152
0.76
V
F
.45V
.55V
.60V
.70V
.85V
I
FM
= 1.0A;
T
J
= 25°C*
MAX
0.177
0.110
0.096
0.222
0.071
0.008
0.012
0.060
MAX
4.50
2.80
2.42
5.56
1.80
0.203
0.305
1.52
NOTE
Typical Junction
Capacitance
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
0.5mA
20mA
T
A
= 25°C
T
A
= 100°C
SS12
C
J
230pF
SS13-SS110
50pF
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
Measured at
1.0MHz, V
R
=4.0V
1
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05