UMF5N
General purpose transistors (dual transistors)
FEATURES
2SA2018 and DTC144E are housed independently in a package.
Mounting possible with SOT-363 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half.
SOT-363
1
Marking: F5
Equivalent circuit
(3)
(2)
(1)
DTr2
R
2
(4)
R
1
Tr1
(5)
(6)
Tr1 Absolute maximum ratings (Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-15
-12
-6
-500
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
I
C
=-10μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-15V, I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-2V, I
C
=-10mA
I
C
=-200mA, I
B
=-10mA
V
CE
=-2V, I
E
=-10mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
260
6.5
270
conditions
Min
-15
-12
-6
-0.1
-0.1
680
-0.25
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
