UMG3N
General purpose transistors (dual transistors)
SOT-353
FEATURES
Two DTC143T chips in a package
Mounting possible with SOT-353 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half.
Marking: G3
(3)
(2)
1
Equivalent circuit
R
1
DTr
2
(4)
(1)
R
1
DTr
1
(5)/(6)
Absolute maximum ratings (Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
Storage Temperature
LIMITS
50
50
5
100
150
150
-55~+150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Input resistor
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R
1
Test
I
C
=1mA,I
B
=0
I
E
=50μA,I
C
=0
V
CB
=50V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V,I
C
=1mA
I
C
=5mA,I
B
=0.25mA
V
CE
=10V,I
E
=-5mA, f=100MHz
3.29
250
4.7
6.11
100
conditions
Min
50
50
5
0.5
0.5
600
0.3
V
MHz
kΩ
Typ
Max
Unit
V
V
V
uA
uA
I
C
=50μA,I
E
=0
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
