XP151A13COMR
20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
1)
1)
1)
Symbol
Test Condition
Min.
Typ.
Miax.
Unit
BV
DSS
R
DS(on)
V
GS
= 0V, I
D
= 10uA
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
20
70
85
0.6
1
o
V
85
mΩ
115
V
uA
10
±100
10
nA
S
V
GS(th)
I
DSS
I
GSS
g
fs
V
DS
=V
GS
, I
D
= 250uA
V
DS
= 16V, V
V
DS
= 20V, V
GS
GS
= 0V
= 0V TJ=55
C
V
GS
= ± 8V, V
DS
= 0V
V
DS
= 5V, I
D
= 3.6A
Q
g
V
DS
= 10V, I
D
= 3.6A
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
V
DS
= 10V, V = 0V
GS
C
oss
f = 1.0 MHz
C
rss
I
D
^
3.6A,V
GEN
= 4.5V
R
G
= 6
Ω
V
DD
= 10V, RL=5.5
Ω
V
GS
= 4.5V
5.4
0.65
1.6
12
36
34
10
340
115
33
10
nC
25
60
ns
60
25
pF
I
S
V
SD
I
S
= 1.6A, V
GS
1.6
A
V
= 0V
1.2
Pulse test: pulse width <= 300us, duty cycle<= 2%
２
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semiconductor
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