XP152A12COMR
20V P-Channel Enhancement Mode MOSFET
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.8A
RDS(ON), Vgs@-2.5V, Ids@-2.0A
130m
Ω
190m
Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
G
S
SOT-23(PACKAGE)
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
2)
Symbol
Limit
Unit
V
DS
V
GS
I
D
I
DM
TA = 25
o
TA = 75
o
C
2)
-20
±8
-2.2
-8
1.25
0.8
-55 to 150
100
166
o
V
A
P
D
T
J
, T
stg
R
thJA
W
o
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
C
Junction-to-Ambient Thermal Resistance (PCB mounted)
3)
C/W
Notes
1)
Pulse width limited by maximum junction temperature.
2)
Surface Mounted on FR4 Board, t
v
5 sec.
3)
Surface Mounted on FR4 Board.
１
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