NPN S I L I C O N T R A N S I S T O
Shantou Huashan Electronic Devices Co.,Ltd.
H1008
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………800mW
V
CBO
——Collector-Base
Voltage………………………………80V
V
CEO
——Collector-Emitter
Voltage……………………………60V
V
EB O
——Emitter-Base
Voltage………………………………8V
I
C
——Collector
Current……………………………………700mA
1―Emitter，E
2―Base，B
3―Collector，
C
TO-92
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
H
FE(1)
V
CE(sat)
V
BE(sat)
BV
CBO
BV
CEO
BV
EBO
f
T
Cob
100
100
40
0.2
0.86
80
60
8
30
50
8
400
0.4
1.1
nA
nA
V
V
V
V
V
MHz
pF
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
I
C
=100μA, I
E
=0
I
C
=10mA,
I
B
=0
I
E
=10μA，I
C
=0
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0，f=1MHz
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Gain-Bandwidth Product
Output Capacitance
█
h
FE
Classification
R
40—80
O
70—140
Y
120—240
GR
240—400
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
