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H1015 参数 Datasheet PDF下载

H1015图片预览
型号: H1015
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 106 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
P NP S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H1015
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………400mW
V
CBO
——Collector-Base
Voltage………………………………-50V
V
CEO
——Collector-Emitter
Voltage……………………………-50V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-150mA
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat)
V
BE(sat)
BV
CBO
BV
CEO
BV
EBO
f
T
-100
-100
70
25
700
-0.3
-1.1
-50
-50
-5
80
nA
nA
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
V
CE
=-6V, I
C
=-150mA
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Gain-Bandwidth Product
V
V
V
V
V
MHz
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
I
C
=-100μA,
I
C
=-1mA,
I
E
=0
I
B
=0
I
E
=-10μA,I
C
=0
V
CE
=-10V, I
C
=-1mA
h
FE
Classification
O
Y
120—240
GR
200—400
BL1
350—510
BL2
480—700
70—140