NPN S I L I C O N T R A N S I S T O
Shantou Huashan Electronic Devices Co.,Ltd.
H1246
█
POWER SUPPLIES，RELAY DRIVERS，
LAMP DRIVERS，ELECTRICAL EQUIPMENT
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………750mW
V
CBO
——Collector-Base
Voltage………………………………30V
V
CEO
——Collector-Emitter
Voltage……………………………25V
V
EB O
——Emitter-Base
Voltage………………………………6V
I
C
——Collector
Cu rrent……………………………………2A
TO-92
1―Emitter，E
2―Collector，
C
3―Base，B
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE(1)
H
FE(2)
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
f
T
Cob
* pulse
30
25
6
100
65
130
0.18
0.85
0.4
1.2
100
100
150
19
560
V
V
V
I
C
=10μA, I
E
=0
I
C
=1mA,
I
B
=0
I
E
=10μA，I
C
=0
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=1.5A *
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
V
V
nA
nA
MHz
pF
I
C
=1.5A, I
B
=75mA *
I
C
=1.5A, I
B
=75mA *
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0，f=1MHz
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
█
h
FE
Classification
R
100—200
S
140—280
T
200—400
U
280—560
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
