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H1426 参数 Datasheet PDF下载

H1426图片预览
型号: H1426
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 243 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
PN P S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
DC-DC Convertor
H1426
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………750mW
V
CBO
——Collector-Base
Voltage………………………………-20V
V
CEO
——Collector-Emitter
Voltage���…………………………-20V
V
E B O
——Emitter-Base
Voltage………………………………-6V
I
C
——Collector
Current……………………………
………-3
A
I
C
——Collector
Current……………………………………300mA
I
B
——Base
Current……………………………………………-200mA
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
 
V
CE(sat)
 
f
T
Cob
-20 
-20 
-6 
 
 
82 
 
 
 
 
 
 
 
 
 
 
240 
35 
 
 
 
V 
V 
V 
I
C
=-50μA,
I
E
=0
I
C
=-1mA, I
B
=0 
I
E
=-10μA,I
C
=0
-0.1  μA 
V
CB
=-20V, I
E
=0
-0.1  μA 
V
EB
=-5V, I
C
=0
390 
 
V
CE
=-2V, I
C
=-100mA 
-0.5 
 
 
I
C
=-2A, I
B
=-100mA
 
V
CE
=-2V, I
C
=-500mA,
MH�½� 
f=100MH�½�
�½�F 
V
CB
=-10V, I
E
=0,f=1MH�½�
V 
Emitter
Cut-off Current
DC Current Gain 
Collector- Emitter Saturation Voltage 
Current Gain-Bandwidth Product
Output Capacitance
h
FE
Classification
P
 
            
 
82—180 
 
 
 
Q
120—270   
 
R
180—390