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H1674 参数 Datasheet PDF下载

H1674图片预览
型号: H1674
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 144 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H1674的Datasheet PDF文件第2页  
NPN S I L I C O N T R A N S I S T O
Shantou Huashan Electronic Devices Co.,Ltd.
H1674
TV PIF AMPLIFIER,FM TUNER RF AMPLIFIER,
MIXER, OSCILLATOR
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………250mW
V
CBO
——Collector-Base
Voltage………………………………30V
V
CEO
——Collector-Emitter
Voltage……………………………20V
V
EB O
——Emitter-Base
Voltage………………………………4V
I
C
——Collector
Current……………………………………20mA
TO-92
1―Emitter,E
2―Base,B
3―Collector,
C
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE(on)
BV
CBO
BV
CEO
BV
EBO
f
T
Cob
0.1
0.1
40
0.1
0.72
30
20
4
400
600
1.2
240
0.3
μA
μA
V
V
V
V
V
MHz
pF
V
CB
=30V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=1mA
I
C
=10μA, I
E
=0
I
C
=5mA,
I
B
=0
I
E
=10μA,I
C
=0
V
CE
=6V, I
C
=1mA
V
CB
=6V, I
E
=0,f=1MHz
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Gain-Bandwidth Product
Output Capacitance
h
FE
Classification
R
40—80
O
70—140
Y
120—240