Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T RA N S I S T O R
H1684
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APPLICATIONS
Medium frequency power amplifier，Medium Seed switching.
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 10W
P
C
——Collector
Dissipation
A
=25℃）
（T
………………��…
1.5W
V
CBO
——Collector-Base
Voltage………………………… 120V
V
CEO
——Collector-Emitter
Voltage……………………… 100V
V
EBO
——Emitter-Base
Voltage……………………………… 6V
I
C
——Collector
Current……………………………………1.5A
1―Emitter，E
2―Collector，C
3―Base，B
TO-126ML
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
120
100
6
100
100
100
30
0.1
0.85
80
1000
50
120
11
0.3
1.2
400
V
V
V
nA
nA
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA，I
C
=0
V
CB
=100V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=1A
Emitter Cut-off Current
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(sat)
Base-Emitter Saturation Voltage
t
ON
t
STG
t
F
f
t
Cob
Turn-On Time
Storage
Fall Time
Current Gain-Bandwidth Product
V
V
nS
nS
nS
MHz
pF
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
See specified test circuit
V
CE
=10V, I
C
=50mA,
V
CB
=10V, I
E
=0,f=1MHz
Time
Output Capacitance
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h
FE
Classification
R
100—200
S
140—280
T
200—400
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
