NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
General Purpose Transistors.
H2222A
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………75V
V
CEO
——Collector-Emitter
Voltage……………………………40V
V
E B O
——Emitter
-Base Voltage………………………………6V
I
C
——Collector
Current
……………………………………
600mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，
C
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE
I
CBO
I
EBO
f
T
Cob
７５
４０
６
１００
３００
４００
０．３
１０
１０
８
Ｖ
Ｖ
Ｖ
Ｖ
I
C
=10μA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10μA，I
C
=0
V
CE
=10V, I
C
=150mA
I
C
=150mA, I
B
=15mA
DC Current Gain
Collector Cut-off Current
V
CE(sat)
Collector- Emitter Saturation Voltage
Emitter
Cut-off Current
Current Gain-Bandwidth Product
�½�Ａ
V
CB
=60V, I
E
=0
�½�Ａ
V
EB
=3V, I
C
=0
ＭＨ�½�
V
CE
=20V, I
C
=20mA
�½�Ｆ
V
CB
=10V, I
E
=0，f=1ＭＨ�½�
Output Capacitance
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
