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H2328S 参数 Datasheet PDF下载

H2328S图片预览
型号: H2328S
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 84 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H2328S
AUDIO POWER AMPLFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………750mW
V
CBO
——Collector-Base
Voltage………………………………30V
V
CEO
——Collector-Emitter
Voltage……………………………30V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current……………………………………2A
1―Emitter,E
2―Collector,
C
3―Base,B
TO-92
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE(ON)
f
T
Cob
30
30
5
100
100
100
320
2
1
120
30
V
V
V
nA
nA
V
V
MHz
pF
I
C
=100μA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA,I
C
=0
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=500mA
I
C
=1.5mA, I
B
=30mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, I
E
=0,
F=1MHz
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Collector-Base Capacitance
h
FE
Classification
O
100—200
Y
160—320