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H2907A 参数 Datasheet PDF下载

H2907A图片预览
型号: H2907A
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 245 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H2907A的Datasheet PDF文件第2页  
PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATIONS
H2907A
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………-60V
V
CEO
——Collector-Emitter
Voltage……………………………-60V
V
E B O
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-600mA
TO-92
1―Emitter,E
2―Base,B
3―Collector,
C
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CBO
BV
CEO
BV
EBO
I
CBO
H
FE(2)
H
FE(3)
-60 
-60 
-5 
 
75 
100 
50 
 
 
 
 
200 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
-10 
 
300 
 
-0.4 
-1.6 
-1.3 
-2.6 
 
8 
V 
V 
V 
 
 
 
V 
V 
V 
V 
I
C
=-10μA,
I
C
=-10mA,
I
E
=0
I =0 
B
I
E
=-10μA,I
C
=0
�½�A 
V
CB
=-50V, I
E
=0
V
CE
=-10V, I
C
=-0.1mA 
V
CE
=-10V, I
C
=-150mA
V
CE
=-10V, I
C
=-500mA
I
C
=-150mA, I
B
=-15mA 
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA 
I
C
=-500mA, I
B
=-50mA
H
FE(1)
 
DC Current Gain 
V
CE(sat1)
 
Collector- Emitter Saturation Voltage 
V
CE(sat2)
V
BE(sat1)
 
Base-Emitter Saturation Voltage 
V
BE(sat2)
f
T
Cob
t
ON
t
D
t
R
t
OFF
t
STG
t
F
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
MH�½� 
V
CE
=-20V,I
C
=-50mA,
f=100MH�½�
�½�F 
V
CB
=-10V, I
E
=0,f=1MH�½�
Vcc=-30V
45  �½�S 
Ic=-150mA
10  �½�S 
I
B1
=-15mA
40  �½�S 
Vcc=-6V
100  �½�S 
Ic=-150mA
80  �½�S 
I
B1
=I
B2
=-15mA
30  �½�S