欢迎访问ic37.com |
会员登录 免费注册
发布采购

H3202 参数 Datasheet PDF下载

H3202图片预览
型号: H3202
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 243 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
General Purpose And Switching Applications..
H3202
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………500mW
V
CBO
——Collector-Base
Voltage………………………………35V
V
CEO
——Collector-Emitter
Voltage……………………………30V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——Collector
Current………………………………………500mA
I
B
——Base
Current……………………………………………100mA
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CBO
BV
CEO
BV
EBO
H
FE(1)
 
H
FE(2)
 
V
CE(sat)
 
V
BE(ON)
I
CBO
I
EBO
f
T
Cob
35 
30 
5 
70 
25 
 
 
 
 
 
 
 
 
 
 
 
0.1 
0.8 
 
 
300 
7.0 
 
 
 
240 
 
0.25 
1.0 
100 
V 
V 
V 
 
 
V 
V 
I
C
=100μA, I
E
=0
I
C
=1mA, I =0 
B
I
E
=100μA,I
C
=0
V
CE
=1V, I
C
=100mA 
V
CE
=6V, I
C
=400mA 
I
C
=20mA, I
B
=2mA
 
V
CE
=1V, I
C
=100mA
DC Current Gain 
DC Current Gain 
Collector- Emitter Saturation Voltage 
Base-Emitter On Voltage
Collector Cut-off Current
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
100 
 
MH�½� 
V
CE
=6V, I
C
=20mA
 
�½�F 
V
CB
=6V, I
E
=0,f=1MH�½�
�½�A 
V
CB
=35V, I
E
=0
�½�A 
V
EB
=5V, I
C
=0
h
FE
Classification
O
 
 
    
 
  70—140   
            
Y
   120—240