NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
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APPLICATIONS
HIGH CURRENT APPLICATIONS.
H3203
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………35V
V
CEO
——Collector-Emitter
Voltage……………���……………30V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——Collector
Current
……………………………………
800mA
TO-92
1―Emitter，E
2―Collector，
C
3―Base，B
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
３５
３０
５
１００
３５
０５
１２０
１３
３２０
０．５
０．８
１００
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
I
C
=100μA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA，I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=700mA
I
C
=500mA, I
B
=20mA
V
CE
=1V, I
C
=10mA
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
V
BE
I
CBO
I
EBO
f
T
Cob
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
１００
ＭＨ�½�
V
CE
=5V, I
C
=10mA
�½�Ｆ
V
CB
=10V, I
E
=0，f=1ＭＨ�½�
�½�Ａ
V
CB
=35V, I
E
=0
�½�Ａ
V
EB
=5V, I
C
=0
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H
FE
Classification
O
１００—２００
Y
１６０—３２０
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
