P N P S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H327
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SWITCHING AND AMPLFIER APPLICATIONS
Suitable for AF-Driver stages and low power output stages
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ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………-50V
V
CEO
——Collector-Emitter
Voltage……………………………-45V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-500mA
TO-92
1―Collector,
C
2―Base,B
3―Emitter,E
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ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat)
V
BE(ON)
f
T
Ccbo
-50
-45
-5
-100
-10
100
40
600
-0.7
-1.2
100
8
V
V
V
nA
μA
I
C
=-100μA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-100μA,I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-500mA
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Collector-Base Capacitance
V
V
MHz
pF
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-5V, I
C
=-10mA
V
CB
=-10V, I
E
=0
F=1MHz
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h
FE
Classification
16
100—250
25
160—400
40
250—600