PNP S I L I C O N T R AN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H369
█
APPLICATIONS
General Purpose Amplifier Application.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………0.83W
V
CBO
——Collector-Base
Voltage………………………………-32V
V
CEO
——Collector-Emitter
Voltage……………………………-20V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………………-1A
TO-92
1―Emitter，E
2―Collector，
C
3―Base，B
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE（2）
H
FE（3）
V
CE(sat)
V
BE(on1)
V
BE(on2)
-32
-20
-5
85
50
60
375
V
V
V
I
C
=-100μA,
I
C
=-2mA,
I
E
=0
I
B
=0
I
E
=-100μA，I
C
=0
V
CE
=-1V, I
C
=-500mA
V
CE
=-10V, I
C
=-5mA
V
CE
=-1V, I
C
=-1A
H
FE（1）
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
-0.5
-1
-0.7
-0.1
-10
-0.1
40
140
28
V
V
V
μA
μA
μA
MHz
pF
I
C
=-1A, I
B
=-100mA
V
CE
=-1V, I
C
=-1A
V
CE
=-10V, I
C
=-5mA
V
CB
=-25V, I
E
=0
V
CB
=-25V, I
E
=0,Ta=150
℃
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-50mA ,f=100MHz
V
CB
=-10V, I
E
=0，f=1MHz
I
CBO（1）
Collector Cut-off Current
I
CBO（2）
Collector Cut-off Current
I
EBO
f
T
Cc
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Collector
Capacitance
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
