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H3904 参数 Datasheet PDF下载

H3904图片预览
型号: H3904
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 61 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
N PN S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H3904
APPLICATIONS
Small Signal Amplifier
;High
Frequency oscillator;Switching Applications.
(complement To H3906)
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………60V
V
CEO
——Collector-Emitter
Voltage……………………………40V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current………………………………………200mA
1―Emitter,E
2―Base,B
3―Collector,C
TO-92
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Current Gain-Bandwidth Product
60
40
5
0.1
0.1
350
0.2
0.85
V
V
V
μA
μA
V
V
MHz
70
f
T
300
I
C
=100μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=10mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=20V, I
C
=10mA
f=100MHz
h
FE
Classification
A
70—240
B
220—350